IRF250 JANTX2N6766 JANTXV2N6766 1 2019-07-01 Product Summary Part Number BVDSS ID IRF250 200V 30A RDS(on) 0.085 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET®TRANSISTORS THRU-HOLE -TO-3 (TO-204AE) Description For footnotes refer to the page 2. International Rectifier HiRel Products, Inc. Features Repetitive Avalanche Ratings. N-CHANNEL POWER MOSFETS, IRF250 datasheet, IRF250 circuit, IRF250 data sheet: SAMSUNG, alldatasheet, datasheet, Datasheet search site for Electronic Components. N-CHANNEL POWER MOSFETS, IRF250 datasheet, IRF250 circuit, IRF250 data sheet: SAMSUNG, alldatasheet, datasheet, Datasheet search site for Electronic Components.
Type Designator: IRFP250
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 180 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 33 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 117 nC
Rise Time (tr): 50 nS
Drain-Source Capacitance (Cd): 420 pF
Maximum Drain-Source On-State Resistance (Rds): 0.085 Ohm
Package: TO247
IRFP250 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFP250 Datasheet (PDF)
0.1. irfp250.pdf Size:271K _st
IRFP250N-CHANNEL 200V - 0.073 - 33A TO-247PowerMeshII MOSFETTYPE VDSS RDS(on) IDIRFP250 200V
0.2. irfp250npbf.pdf Size:180K _international_rectifier
PD - 95007AIRFP250NPbFHEXFET Power MOSFETl Advanced Process Technologyl Dynamic dv/dt RatingDVDSS = 200Vl 175C Operating Temperaturel Fast Switchingl Fully Avalanche RatedRDS(on) = 0.075Gl Ease of Parallelingl Simple Drive RequirementsID = 30Al Lead-Free SDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechni
0.3. irfp250-253.pdf Size:501K _international_rectifier
0.4. irfp250pbf.pdf Size:3344K _international_rectifier
PD - 95008IRFP250PbF Lead-Freewww.irf.com 12/11/04IRFP250PbF2 www.irf.comIRFP250PbFwww.irf.com 3IRFP250PbF4 www.irf.comIRFP250PbFwww.irf.com 5IRFP250PbF6 www.irf.comIRFP250PbFTO-247AC Package OutlineDimensions are shown in millimeters (inches)- D -3.65 (.143)5.30 (.209)15.90 (.626) 3.55 (.140)4.70 (.185)15.30 (.602)0.25 (.010) M D B M2.
0.5. irfp250.pdf Size:164K _international_rectifier
0.6. irfp250mpbf.pdf Size:636K _international_rectifier
PD - 96292IRFP250MPbFHEXFET Power MOSFETl Advanced Process Technologyl Dynamic dv/dt RatingDVDSS = 200Vl 175C Operating Temperaturel Fast Switchingl Fully Avalanche RatedRDS(on) = 0.075Gl Ease of Parallelingl Simple Drive RequirementsID = 30Al Lead-Free SDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniq
0.7. irfp250n.pdf Size:122K _international_rectifier
PD - 94008IRFP250NHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 200V Dynamic dv/dt Rating 175C Operating Temperature Fast SwitchingRDS(on) = 0.075G Fully Avalanche Rated Ease of ParallelingID = 30AS Simple Drive RequirementsDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniques to achieve extreme
0.8. irfp250a.pdf Size:926K _samsung
Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.085 Rugged Gate Oxide Technology Lower Input CapacitanceID = 32 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Low RDS(ON) : 0.071 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Val
0.9. irfp250 sihfp250.pdf Size:1453K _vishay
IRFP250, SiHFP250Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200 Repetitive Avalanche Rated AvailableRDS(on) ()VGS = 10 V 0.085 Isolated Central Mounting HoleRoHS*Qg (Max.) (nC) 140COMPLIANT Fast SwitchingQgs (nC) 28 Ease of ParallelingQgd (nC) 74 Simple Drive RequirementsConfiguration Single Compli
0.10. irfp250r irfp252r.pdf Size:188K _harris_semi Oil paint photoshop cc 2019.
0.11. irfp250npbf.pdf Size:260K _inchange_semiconductor
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP250NPBFFEATURESWith TO-247 packagingWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source
0.12. irfp250m.pdf Size:241K _inchange_semiconductor
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP250MIIRFP250MFEATURESStatic drain-source on-resistance:RDS(on)75mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V
0.13. irfp250.pdf Size:400K _inchange_semiconductor
iscN-Channel MOSFET Transistor IRFP250FEATURESLow drain-source on-resistance:RDS(ON) 85m @V =10VGSEnhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER
0.14. irfp250n.pdf Size:241K _inchange_semiconductor Ynab free. download full version.
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP250NIIRFP250NFEATURESStatic drain-source on-resistance:RDS(on)75mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V
Datasheet: IRFP240A, IRFP240FI, IRFP241, IRFP242, IRFP243, IRFP244, IRFP244A, IRFP245, IRF630, IRFP250A, IRFP251, IRFP252, IRFP253, IRFP254, IRFP254A, IRFP255, IRFP260.
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Irf250 Mosfet Datasheet Pdf
Here is the 200W MOSFET amplifier powered based on four piece of IRFP250N, they are very cheap and easy to find in the electronic market in your area. The circuit has been assembled and tested with very good performance.
This 200W MOSFET amplifier circuit designed for single or mono audio channel application. You should build two similar circuits for stereo audio application. Build one first for performance testing to ensure that this circuit really wongking well with great audio performance.
The power supply used for this circuit is a symmetrical / dual polarity type. You need 4 amperes minimum of transformer with +/- 45V output. For stereo application, use about 8 amperes, although the 5A transformer is good enough 😀 . You may use the power supply circuit design on this post: 200W Power Amplifier using Transistor
200W MOSFET Amplifier PCB Layout Design
Bottom / Chopper PCB Design
Irf250 Mosfet Datasheet
Top PCB Design / Component Placement
Irf250 Mosfet Pin Diagram
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